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Opt Express. 2011 Feb 14;19(4):3163-74. doi: 10.1364/OE.19.003163.

Ultra-low-loss high-aspect-ratio Si3N4 waveguides.

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1
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA. jbauters@ece.ucsb.edu

Abstract

We characterize an approach to make ultra-low-loss waveguides using stable and reproducible stoichiometric Si3N4 deposited with low-pressure chemical vapor deposition. Using a high-aspect-ratio core geometry, record low losses of 8-9 dB/m for a 0.5 mm bend radius down to 3 dB/m for a 2 mm bend radius are measured with ring resonator and optical frequency domain reflectometry techniques. From a waveguide loss model that agrees well with experimental results, we project that 0.1 dB/m total propagation loss is achievable at a 7 mm bend radius with this approach.

PMID:
21369138
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