Send to

Choose Destination
See comment in PubMed Commons below
Nanotechnology. 2011 Apr 8;22(14):145604. doi: 10.1088/0957-4484/22/14/145604. Epub 2011 Mar 3.

Preparation of the Ge(001) surface towards fabrication of atomic-scale germanium devices.

Author information

School of Physics, University of New South Wales, Sydney, NSW 2052, Australia.


We demonstrate the preparation of a clean Ge(001) surface with minimal roughness (RMS ~0.6 Å), low defect densities (~0.2% ML) and wide mono-atomic terraces (~80-100 nm). We use an ex situ wet chemical process combined with an in situ anneal treatment followed by a homoepitaxial buffer layer grown by molecular beam epitaxy and a subsequent final thermal anneal. Using scanning tunneling microscopy, we investigate the effect on the surface morphology of using different chemical reagents, concentrations as well as substrate temperature during growth. Such a high quality Ge(001) surface enables the formation of defect-free H-terminated Ge surfaces for subsequent patterning of atomic-scale devices by scanning tunneling lithography. We have achieved atomic-scale dangling bond wire structures 1.6 nm wide and 40 nm long as well as large, micron-size patterns with clear contrast of lithography in STM images.

PubMed Commons home

PubMed Commons

How to join PubMed Commons

    Supplemental Content

    Full text links

    Icon for IOP Publishing Ltd.
    Loading ...
    Support Center