Send to

Choose Destination
Opt Express. 2011 Jan 17;19(2):1665-79. doi: 10.1364/OE.19.001665.

Scintillation induced response in passively-quenched Si-based single photon counting avalanche diode arrays.

Author information

Molecular Imaging Program at Stanford (MIPS), Radiology Department, Stanford University School of Medicine, Stanford, California, USA.


An optical electrical model which studies the response of Si-based single photon counting arrays, specifically silicon photomultipliers (SiPMs), to scintillation light has been developed and validated with analytically derived and experimental data. The scintillator-photodetector response in terms of relative pulse height, 10%-90% rise/decay times to light stimuli of different rise times (ranging from 0.1 to 5 ns) and decay times (ranging from 1 to 50 ns), as well as for different decay times of the photodetector are compared in theory and simulation. A measured detector response is used as a reference to further validate the model and the results show a mean deviation of simulated over measured values of 1%.

[Indexed for MEDLINE]

Supplemental Content

Loading ...
Support Center