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Phys Rev Lett. 2010 Oct 15;105(16):167202. Epub 2010 Oct 12.

Tunneling spin injection into single layer graphene.

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1
Department of Physics and Astronomy, University of California, Riverside, California 92521, USA.

Abstract

We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO₂ seeded MgO barriers. A nonlocal magnetoresistance (ΔR(NL)) of 130  Ω is observed at room temperature, which is the largest value observed in any material. Investigating ΔR(NL) vs SLG conductivity from the transparent to the tunneling contact regimes demonstrates the contrasting behaviors predicted by the drift-diffusion theory of spin transport. Furthermore, tunnel barriers reduce the contact-induced spin relaxation and are therefore important for future investigations of spin relaxation in graphene.

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