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J Nanosci Nanotechnol. 2010 Sep;10(9):5648-52.

Temperature dependent emission quenching for silicon nanoclusters.

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1
Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland.

Abstract

Silicon reach-silicon-oxide (SRSO) film containing silicon nanoclusters was obtained by the reactive magnetron sputtering. Photoluminescence (PL) spectra were measured as a function of temperature at different excitation wavelengths and additionally at different excitation power densities. Obtained PL spectra characterize by two emission bands centered at 1.6 and 2.4 eV. For these bands, temperature behaviour of PL intensities strongly differs but clearly correlate each other. Moreover, it has been observed that obtained PL intensities versus temperature exhibit a strong dependence on the excitation power density in the low temperature range.

PMID:
21133086
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