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ACS Appl Mater Interfaces. 2010 Dec;2(12):3539-43. doi: 10.1021/am100712h. Epub 2010 Dec 1.

Rectifying properties of p-GaN nanowires and an n-silicon heterojunction vertical diode.

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  • 1Department of Materials Science, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700 032, India.


The heterojunction of a Pd-doped p-GaN nanowire and n-Si (100) is fabricated vertically by the vapor-liquid-solid method. The average diameter of the nanowire is 40 nm. The vertical junction reveals a significantly high rectification ratio of 10(3) at 5 V, a moderate ideality factor of ∼2, and a high breakdown voltage of ∼40 V. The charge transport across the p-n junction is dominated by the electron-hole recombination process. The voltage dependence of capacitance indicates a graded-type junction. The resistance of the junction decreases with an increase in the bias voltage confirmed by impedance measurements.

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