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Nanoscale. 2011 Mar;3(3):897-9. doi: 10.1039/c0nr00800a. Epub 2010 Nov 29.

Morphological impact of zinc oxide layers on the device performance in thin-film transistors.

Author information

1
Organic Materials & Devices (OMD), Department of Materials Science, University Erlangen-Nürnberg, Martensstraße 07, 91058, Erlangen, Germany. hendrik.faber@ww.uni-erlangen.de

Abstract

Zinc oxide thin-films are prepared either by spin coating of an ethanolic dispersion of nanoparticles (NP, diameter 5 nm) or by spray pyrolysis of a zinc acetate dihydrate precursor. High-resolution electron microscopy studies reveal a monolayer of particles for the low temperature spin coating approach and larger crystalline domains of more than 30 nm for the spray pyrolysis technique. Thin-film transistor devices (TFTs) based on spray pyrolysis films exhibit higher electron mobilities of up to 24 cm2 V(-1) s(-1) compared to 0.6 cm2 V(-1) s(-1) for NP based TFTs. These observations were dedicated to a reduced number of grain boundaries within the transistor channel.

PMID:
21116548
DOI:
10.1039/c0nr00800a
[Indexed for MEDLINE]

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