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Nano Lett. 2010 Nov 10;10(11):4702-7. doi: 10.1021/nl1029978. Epub 2010 Oct 8.

Wafer scale homogeneous bilayer graphene films by chemical vapor deposition.

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  • 1Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, United States.


The discovery of electric field induced band gap opening in bilayer graphene opens a new door for making semiconducting graphene without aggressive size scaling or using expensive substrates. However, bilayer graphene samples have been limited to μm(2) size scale thus far, and synthesis of wafer scale bilayer graphene poses a tremendous challenge. Here we report homogeneous bilayer graphene films over at least a 2 in. × 2 in. area, synthesized by chemical vapor deposition on copper foil and subsequently transferred to arbitrary substrates. The bilayer nature of graphene film is verified by Raman spectroscopy, atomic force microscopy, and transmission electron microscopy. Importantly, spatially resolved Raman spectroscopy confirms a bilayer coverage of over 99%. The homogeneity of the film is further supported by electrical transport measurements on dual-gate bilayer graphene transistors, in which a band gap opening is observed in 98% of the devices.

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