Format

Send to

Choose Destination
Nano Lett. 2010 Oct 13;10(10):3868-72. doi: 10.1021/nl101399r.

On resonant scatterers as a factor limiting carrier mobility in graphene.

Author information

1
Centre for Mesoscience and Nanotechnology, University of Manchester, Manchester M13 9PL, UK.

Abstract

We show that graphene deposited on a substrate has a non-negligible density of atomic scale defects. This is evidenced by a previously unnoticed D peak in the Raman spectra with intensity of ∼1% with respect to the G peak. We evaluated the effect of such impurities on electron transport by mimicking them with hydrogen adsorbates and measuring the induced changes in both mobility and Raman intensity. If the intervalley scatterers responsible for the D peak are monovalent, their concentration is sufficient to account for the limited mobilities currently achievable in graphene on a substrate.

PMID:
20795655
DOI:
10.1021/nl101399r

Supplemental Content

Full text links

Icon for American Chemical Society
Loading ...
Support Center