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Nano Lett. 2010 Sep 8;10(9):3604-10. doi: 10.1021/nl1025776.

New top-down approach for fabricating high-aspect-ratio complex nanostructures with 10 nm scale features.

Author information

1
National Research Laboratory for Organic Opto-Electronic Materials, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea.

Abstract

We describe a new patterning technique, named "secondary sputtering lithography" that enables fabrication of ultrahigh-resolution (ca. 10 nm) and high aspect ratio (ca. 15) patterns of three-dimensional various shapes. In this methodology, target materials are etched and deposited onto the side surface of a prepatterned polymer by using low Ar ion bombarding energies, based on the angular distribution of target particles by ion-beam bombardment. After removal of the prepatterned polymer, high aspect ratios and high-resolution patterns of target materials are created.

PMID:
20715809
DOI:
10.1021/nl1025776

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