Format

Send to

Choose Destination
See comment in PubMed Commons below
Nanoscale Res Lett. 2010 May 27;5(8):1320-3. doi: 10.1007/s11671-010-9645-7.

Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates.

Author information

1
Arkansas Institute for Nanoscale Materials Science and Engineering, University of Arkanssas, Fayetteville, AR, 72701, USA. ymazur@uark.edu.

Abstract

Multilayers of InGaAs nanostructures are grown on GaAs(210) by molecular beam epitaxy. With reducing the thickness of GaAs interlayer spacer, a transition from InGaAs quantum dashes to arrow-like nanostructures is observed by atomic force microscopy. Photoluminescence measurements reveal all the samples of different spacers with good optical properties. By adjusting the InGaAs coverage, both one-dimensional and two-dimensional lateral ordering of InGaAs/GaAs(210) nanostructures are achieved.

KEYWORDS:

GaAs(210); InGaAs nanostructures; Lateral ordering; Molecular beam epitaxy

PubMed Commons home

PubMed Commons

0 comments
How to join PubMed Commons

    Supplemental Content

    Full text links

    Icon for Springer Icon for PubMed Central
    Loading ...
    Support Center