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Nanoscale Res Lett. 2010 May 27;5(8):1320-3. doi: 10.1007/s11671-010-9645-7.

Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates.

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Arkansas Institute for Nanoscale Materials Science and Engineering, University of Arkanssas, Fayetteville, AR, 72701, USA.


Multilayers of InGaAs nanostructures are grown on GaAs(210) by molecular beam epitaxy. With reducing the thickness of GaAs interlayer spacer, a transition from InGaAs quantum dashes to arrow-like nanostructures is observed by atomic force microscopy. Photoluminescence measurements reveal all the samples of different spacers with good optical properties. By adjusting the InGaAs coverage, both one-dimensional and two-dimensional lateral ordering of InGaAs/GaAs(210) nanostructures are achieved.


GaAs(210); InGaAs nanostructures; Lateral ordering; Molecular beam epitaxy

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