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Opt Express. 2010 May 24;18(11):11025-32. doi: 10.1364/OE.18.011025.

High-efficiency vertical GaN slab light-emitting diodes using self-coherent directional emitters.

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  • 1Advanced Technology Lab, LED Division, LG Innotek, Seoul 137-724, Korea.


We demonstrate a highly-efficient, large-area (1x1 mm2) GaN slab light-emitting diode using a vertically directional emitter produced from constructive interference. The vertical radiation can be coupled effectively into leaky modes from the beginning and thus a high-extraction efficiency can be expected with reduced material absorption. The far-field measurements show that the desired vertical emission profiles are obtained by varying the thickness of the dielectric layer between the emitter and bottom silver mirror. With the combination of a light extractor of a randomly textured surface, the output power was increased approximately 1.4 fold compared to a non-patterned device at a standard current of 350 mA without electrical degradation.

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