Format

Send to

Choose Destination
Opt Express. 2010 May 10;18(10):9809-14. doi: 10.1364/OE.18.009809.

Broadband all-optical modulation in hydrogenated-amorphous silicon waveguides.

Author information

1
Microsystems Engineering, Kate Gleason College of Engineering, Rochester Institute of Technology, Rochester, New York 14623, USA. kxn0404@rit.edu

Abstract

We demonstrate broadband all-optical modulation in low loss hydrogenated-amorphous silicon (a-Si:H) waveguides. Significant modulation (approximately 3 dB) occurs with a device of only 15 microm without the need for cavity interference effects in stark contrast to an identical crystalline silicon waveguide. We attribute the enhanced modulation to the significantly larger free-carrier absorption effect of a-Si:H, estimated here to be alpha = 1.6310(-16)N cm(-1). In addition, we measured the modulation time to be only tau(c) approximately 400 ps, which is comparable to the recombination rate measured in sub-micron crystalline silicon waveguides, illustrating the strong dominance of surface recombination in similar sized (460 nm x 250 nm) a-Si:H waveguides. Consequently, a-Si:H could serve as a high performance platform for backend integrated CMOS photonics.

PMID:
20588830
[Indexed for MEDLINE]

Supplemental Content

Full text links

Icon for Optical Society of America
Loading ...
Support Center