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ACS Nano. 2010 Jul 27;4(7):4206-10. doi: 10.1021/nn100971s.

Direct low-temperature nanographene CVD synthesis over a dielectric insulator.

Author information

1
IFW Dresden, P.O. Box 270116, 01171 Dresden, Germany. m.ruemmeli@ifw-dresden.de

Abstract

Graphene ranks highly as a possible material for future high-speed and flexible electronics. Current fabrication routes, which rely on metal substrates, require post-synthesis transfer of the graphene onto a Si wafer, or in the case of epitaxial growth on SiC, temperatures above 1000 degrees C are required. Both the handling difficulty and high temperatures are not best suited to present day silicon technology. We report a facile chemical vapor deposition approach in which nanographene and few-layer nanographene are directly formed over magnesium oxide and can be achieved at temperatures as low as 325 degrees C.

PMID:
20586480
DOI:
10.1021/nn100971s
[Indexed for MEDLINE]

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