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Nano Lett. 2010 May 12;10(5):1639-44. doi: 10.1021/nl9041774.

GaAs/AlGaAs core multishell nanowire-based light-emitting diodes on Si.

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1
Graduate School of Information Science and Technology, Hokkaido University, North 14 West 9, Sapporo, Japan. tomioka@rciqe.hokudai.ac.jp

Abstract

We report on integration of GaAs nanowire-based light-emitting-diodes (NW-LEDs) on Si substrate by selective-area metalorganic vapor phase epitaxy. The vertically aligned GaAs/AlGaAs core-multishell nanowires with radial p-n junction and NW-LED array were directly fabricated on Si. The threshold current for electroluminescence (EL) was 0.5 mA (current density was approximately 0.4 A/cm(2)), and the EL intensity superlinearly increased with increasing current injections indicating superluminescence behavior. The technology described in this letter could help open new possibilities for monolithic- and on-chip integration of III-V NWs on Si.

PMID:
20377199
DOI:
10.1021/nl9041774
[Indexed for MEDLINE]
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