Send to

Choose Destination
See comment in PubMed Commons below
Phys Rev Lett. 2010 Feb 12;104(6):067405. Epub 2010 Feb 12.

Tuning the exciton binding energies in single self-assembled InGaAs/GaAs quantum dots by piezoelectric-induced biaxial stress.

Author information

Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden, Germany.


We study the effect of an external biaxial stress on the light emission of single InGaAs/GaAs(001) quantum dots placed onto piezoelectric actuators. With increasing compression, the emission blueshifts and the binding energies of the positive trion (X+) and biexciton (XX) relative to the neutral exciton (X) show a monotonic increase. This phenomenon is mainly ascribed to changes in electron and hole localization and it provides a robust method to achieve color coincidence in the emission of X and XX, which is a prerequisite for the possible generation of entangled photon pairs via the recently proposed "time reordering" scheme.

PubMed Commons home

PubMed Commons

How to join PubMed Commons

    Supplemental Content

    Full text links

    Icon for American Physical Society
    Loading ...
    Support Center