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Phys Rev Lett. 2009 Nov 27;103(22):226802. Epub 2009 Nov 24.

Dominant mobility modulation by the electric field effect at the LaAlO3/SrTiO3 interface.

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1
Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277-8651, Japan.

Abstract

Caviglia et al. [Nature (London) 456, 624 (2008)] have found that the superconducting LaAlO3/SrTiO3 interface can be gate modulated. A central issue is to determine the principal effect of the applied electric field. Using magnetotransport studies of a gated structure, we find that the mobility variation is almost 5 times that of the sheet carrier density. Furthermore, superconductivity can be suppressed at both positive and negative gate bias. These results indicate that the relative disorder strength strongly increases across the superconductor-insulator transition.

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