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Opt Express. 2010 Jan 18;18(2):1462-8. doi: 10.1364/OE.18.001462.

Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO(2).

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  • 1Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju, Republic of Korea.


We report on the improvement of light output power of InGaN/GaN blue light-emitting diodes (LEDs) by lateral epitaxial overgrowth (LEO) of GaN using a pyramidal-shaped SiO(2) mask. The light output power was increased by 80% at 20 mA of injection current compared with that of conventional LEDs without LEO structures. This improvement is attributed to an increased internal quantum efficiency by a significant reduction in threading dislocation and by an enhancement of light extraction efficiency by pyramidal-shaped SiO(2) LEO mask.

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