Electrical properties and memory effects of field-effect transistors from networks of single- and double-walled carbon nanotubes

Nanotechnology. 2010 Mar 19;21(11):115204. doi: 10.1088/0957-4484/21/11/115204. Epub 2010 Feb 22.

Abstract

We study field-effect transistors made of single- and double-walled carbon nanotube networks for applications as memory devices. The transfer characteristics of the transistors exhibit a reproducible hysteresis which enables their use as nano-sized memory cells with operations faster than 10 ms, endurance longer than 10(+4) cycles and charge retention of a few hours in air. We propose water enhanced charge trapping at the SiO(2)/air interface close to the nanotubes as the dominant mechanism for charge storage. We show that charge storage can be improved by limiting exposure of the device to air.

Publication types

  • Research Support, U.S. Gov't, Non-P.H.S.