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Nanotechnology. 2010 Mar 5;21(9):095502. doi: 10.1088/0957-4484/21/9/095502. Epub 2010 Feb 4.

Si nanowire metal-insulator-semiconductor photodetectors as efficient light harvesters.

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School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.


Novel ITO-Si nanowire (NW) metal-insulator-semiconductor (MIS) photodetectors were fabricated by using n-type Si NWs as detection units and ITO films as top gate electrodes. Measurements on the Si NW based device reveal a significant photoresponse, including photocurrent generation with an external quantum efficiency (EQE) of approximately 35% at a peak wavelength of 600 nm at zero external bias, and with an EQE of 70% at a peak wavelength of 800 nm at - 0.5 V bias. The NW device shows a flat and low reflectance and almost constant EQE up to a 60 degrees incident angle of illumination, demonstrating efficient visible-light harvesting by the Si NW antenna.

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