Format

Send to

Choose Destination
See comment in PubMed Commons below
Nanotechnology. 2010 Mar 5;21(9):095502. doi: 10.1088/0957-4484/21/9/095502. Epub 2010 Feb 4.

Si nanowire metal-insulator-semiconductor photodetectors as efficient light harvesters.

Author information

1
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.

Abstract

Novel ITO-Si nanowire (NW) metal-insulator-semiconductor (MIS) photodetectors were fabricated by using n-type Si NWs as detection units and ITO films as top gate electrodes. Measurements on the Si NW based device reveal a significant photoresponse, including photocurrent generation with an external quantum efficiency (EQE) of approximately 35% at a peak wavelength of 600 nm at zero external bias, and with an EQE of 70% at a peak wavelength of 800 nm at - 0.5 V bias. The NW device shows a flat and low reflectance and almost constant EQE up to a 60 degrees incident angle of illumination, demonstrating efficient visible-light harvesting by the Si NW antenna.

PubMed Commons home

PubMed Commons

0 comments
How to join PubMed Commons

    Supplemental Content

    Full text links

    Icon for IOP Publishing Ltd.
    Loading ...
    Support Center