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Nanotechnology. 2010 Mar 5;21(9):095302. doi: 10.1088/0957-4484/21/9/095302. Epub 2010 Jan 29.

Sub-100 nm silicon nanowires by laser interference lithography and metal-assisted etching.

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1
Max Planck Institute of Microstructure Physics, Halle, Germany. deboor@mpi-halle.de

Abstract

By combining laser interference lithography and metal-assisted etching we were able to produce arrays of silicon nanowires with uniform diameters as small as 65 nm and densities exceeding 2 x 10(7) mm(-2). The wires are single crystalline, vertically aligned, arranged in a square pattern and obey strict periodicity over several cm(2). The applied technique allows for a tailoring of nanowire size and density. Using a controlled and scalable process to fabricate sub-100 nm silicon nanowires is an important step towards the realization of cost-effective electronic and thermoelectric devices.

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