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Nanotechnology. 2010 Feb 10;21(6):065202. doi: 10.1088/0957-4484/21/6/065202. Epub 2010 Jan 8.

Modelling and fabrication of GaAs photonic-crystal cavities for cavity quantum electrodynamics.

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1
Electrical Engineering, California Institute of Technology, Pasadena, CA 91125, USA. uday@caltech.edu

Abstract

In this paper, we present recent progress in the growth, modelling, fabrication and characterization of gallium arsenide (GaAs) two-dimensional (2D) photonic-crystal slab cavities with embedded indium arsenide (InAs) quantum dots (QDs) that are designed for cavity quantum electrodynamics (cQED) experiments. Photonic-crystal modelling and device fabrication are discussed, followed by a detailed discussion of different failure modes that lead to photon loss. It is found that, along with errors introduced during fabrication, other significant factors such as the presence of a bottom substrate and cavity axis orientation with respect to the crystal axis, can influence the cavity quality factor (Q). A useful diagnostic tool in the form of contour finite-difference time domain (FDTD) is employed to analyse device performance.

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