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Ultrason Sonochem. 2010 Mar;17(3):621-7. doi: 10.1016/j.ultsonch.2009.11.013. Epub 2009 Nov 26.

Dependence of sonochemical parameters on the platinization of rutile titania - an observation of a pronounced increase in photocatalytic efficiencies.

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1
Ultrasonic Processing Group, Advanced Manufacturing Research Institute (AMRI), National Institute of Advanced Industrial Science and Technology (AIST), 2266-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463-8560, Japan. Sivakumar.Manickam@nottingham.edu.my

Abstract

Using a standing wave sonochemical reactor (SWSR), the influences of parameters of ultrasonic power input, sonication time, sonication temperature and the amount of propanol (which generates the reducing radicals) were systemically investigated to ascertain and optimize the best conditions for the sonochemical reduction of Pt from its precursor hexachloroplatinic acid and then its deposition on rutile TiO(2) (platinization of rutile titania) catalysts. Catalytic activity of the prepared platinized catalysts was tested in the reaction of methyl orange degradation. The results of photocatalytic activity study in the degradation of methyl orange further demonstrate that sonochemically as-prepared Pt/TiO(2) catalysts show a pronounced increase ( approximately 2 times) in photodegradation, even with a deposition of small amounts of platinum (1.4wt.%), as compared to the unsupported or naked rutile titania. Although there are various parameters that influence the sonochemical platinization of rutile titania, the present optimization results clearly indicate that the best photocatalytic degradation of methyl orange can be obtained when the experimental conditions of the preparation were with an input power of 50W, an initial hexachloroplatinic acid volume of 70ml (which results into 1.4wt.% Pt on TiO(2)), sonication time of 90min, 0.18g of propanol and a temperature of 10 degrees C were adopted. The method of ultrasound application to prepare metal supported semiconductors has many advantages such as convenience, safety and high efficiency. Furthermore, it is hopeful that this optimization study can also be extended to the generation of similar metal supported semiconductors.

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