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J Nanosci Nanotechnol. 2009 Nov;9(11):6470-7.

Fluoride-decorated oxides for large enhancement of conductivity in intrinsic silicon nanowires.

Author information

1
Department of Chemistry, Department of Mechanical Engineering and Materials Science, Rice University, MS 222, 6100 Main St., Houston, Texas 77005, USA.

Abstract

We demonstrate that by controlling surface state properties with a simple and rapid aqueous fluoride ion treatment, excellent electronic operation can be achieved on intrinsic Si nanowires without bulk doping, thereby taking advantage of the increase in surface-to-volume ratios in these diminutive structures. Forming the fluoride-decorated (F-decorated) oxide surface significantly increases the conductivity by more than one order of magnitude over the oxide surface and more than three orders of magnitude over the oxide-free H-terminated surface. This provides a methodology that might, in some instances, sidestep the difficult-to-control impurity doping of nanodevices.

PMID:
19908551

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