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Nanotechnology. 2009 Dec 16;20(50):505605. doi: 10.1088/0957-4484/20/50/505605. Epub 2009 Nov 12.

InAs/InSb nanowire heterostructures grown by chemical beam epitaxy.

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1
NEST, Scuola Normale Superiore and CNR-INFM, Piazza S. Silvestro 12, I-56127 Pisa, Italy. daniele.ercolani@sns.it

Abstract

We report the Au-assisted chemical beam epitaxy growth of defect-free zincblende InSb nanowires. The grown InSb segments are the upper sections of InAs/InSb heterostructures on InAs(111)B substrates. We show, through HRTEM analysis, that zincblende InSb can be grown without any crystal defects such as stacking faults or twinning planes. Strain-map analysis demonstrates that the InSb segment is nearly relaxed within a few nanometers from the interface. By post-growth studies we have found that the catalyst particle composition is AuIn(2), and it can be varied to a AuIn alloy by cooling down the samples under TDMASb flux.

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