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Langmuir. 2010 Jan 5;26(1):603-6. doi: 10.1021/la902171j.

Ultraviolet ZnO nanorod photosensors.

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Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan.


This study fabricates and characterizes ultraviolet (UV) photosensors with ZnO nanorods (NRs). The NR arrays were selectively grown in the gap between interdigitated (IDT) electrodes of devices using hydrothermal solution processes and a lithography-based technique. Compared with a conventional ZnO photosensor without NRs, the proposed UV NR photosensors have much higher photoresponse in the UV region. Additionally, the photoconductive gain of an NR photosensor increased as UV illumination time increased; it varied at 34.45-5.32 x 10(2) under illumination by 18.28 mW/cm(2) optical power. Consequently, the substantial photoconductive gain can be attributed to high surface-to-volume ratio of ZnO NRs. The high density of hole-trap states on NR surfaces lead to a persistent photoconductivity (PPC) state, promoting the transport of carriers through devices.

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