Send to

Choose Destination
Nano Lett. 2009 Nov;9(11):3877-82. doi: 10.1021/nl902067a.

Phosphorus doped Zn(1-x)Mg(x)O nanowire arrays.

Author information

School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA.


We demonstrate the growth of phosphorus doped Zn(1-x)Mg(x)O nanowire (NW) using pulsed laser deposition. For the first time, p-type Zn(0.92)Mg(0.08)O:P NWs are likely obtained in reference to atomic force microscopy based piezoelectric output measurements, X-ray photoelectron spectroscopy, and the transport property between the NWs and a n-type ZnO film. A shallow acceptor level of approximately 140 meV is identified by temperature-dependent photoluminescence. A piezoelectric output of 60 mV on average has been received using the doped NWs. Besides a control on NW aspect ratio and density, band gap engineering has also been achieved by alloying with Mg to a content of x = 0.23. The alloyed NWs with controllable conductivity type have potential application in high-efficiency all-ZnO NWs based LED, high-output ZnO nanogenerator, and other optical or electrical devices.


Supplemental Content

Full text links

Icon for American Chemical Society
Loading ...
Support Center