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Nanotechnology. 2009 Sep 16;20(37):375703. doi: 10.1088/0957-4484/20/37/375703. Epub 2009 Aug 26.

The structural and electrical evolution of graphene by oxygen plasma-induced disorder.

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Samsung Advanced Institute of Technology, Samsung Electronics Company Ltd, Suwon 440-600, Korea.


Evolution of a single graphene layer with disorder generated by remote oxygen plasma irradiation is investigated using atomic force microscopy, Raman spectroscopy and electrical measurement. Gradual changes of surface morphology from planar graphene to isolated granular structure associated with a decrease of transconductance are accounted for by two-dimensional percolative conduction by disorder and the oxygen plasma-induced doping effect. The corresponding evolution of Raman spectra of graphene shows several peculiarities such as a sudden appearance of a saturated D peak followed by a linear decrease in its intensity, a relatively inert characteristic of a D' peak and a monotonic increase of a G peak position as the exposure time to oxygen plasma increases. These are discussed in terms of a disorder-induced change of Raman spectra in the graphite system.

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