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Nano Lett. 2009 Aug;9(8):2973-7. doi: 10.1021/nl901396g.

Screening and interlayer coupling in multilayer graphene field-effect transistors.

Author information

1
School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA. sui@purdue.edu

Abstract

With the motivation of improving the performance and reliability of aggressively scaled nanopatterned graphene field-effect transistors, we present the first systematic experimental study on charge and current distribution in multilayer graphene field-effect transistors. We find a very particular thickness dependence for I(on), I(off), and the I(on)/I(off) ratio and propose a resistor network model including screening and interlayer coupling to explain the experimental findings. In particular, our model does not invoke modification of the linear energy-band structure of graphene for the multilayer case. Noise reduction in nanoscale few-layer graphene transistors is experimentally demonstrated and can be understood within this model as well.

PMID:
19639984
DOI:
10.1021/nl901396g

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