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Nano Lett. 2009 Aug;9(8):2973-7. doi: 10.1021/nl901396g.

Screening and interlayer coupling in multilayer graphene field-effect transistors.

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School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA.


With the motivation of improving the performance and reliability of aggressively scaled nanopatterned graphene field-effect transistors, we present the first systematic experimental study on charge and current distribution in multilayer graphene field-effect transistors. We find a very particular thickness dependence for I(on), I(off), and the I(on)/I(off) ratio and propose a resistor network model including screening and interlayer coupling to explain the experimental findings. In particular, our model does not invoke modification of the linear energy-band structure of graphene for the multilayer case. Noise reduction in nanoscale few-layer graphene transistors is experimentally demonstrated and can be understood within this model as well.


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