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ACS Nano. 2009 Jun 23;3(6):1513-7. doi: 10.1021/nn9001566.

Single photon emission from site-controlled InAs quantum dots grown on GaAs(001) patterned substrates.

Author information

1
Instituto de Microelectronica de Madrid (CNM, CSIC), Isaac Newton 8, Tres Cantos, Madrid, Spain. javierms@imm.cnm.csic.es

Abstract

We present a fabrication method to produce site-controlled and regularly spaced InAs/GaAs quantum dots for applications in quantum optical information devices. The high selectivity of our epitaxial regrowth procedure can be used to allocate the quantum dots only in positions predefined by ex-situ local oxidation atomic force nanolithography. The quantum dots obtained following this fabrication process present a high optical quality which we have evaluated by microphotoluminescence and photon correlation experiments.

PMID:
19435304
DOI:
10.1021/nn9001566
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