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Phys Rev Lett. 2009 Mar 27;102(12):125501. Epub 2009 Mar 23.

An in-plane solid-liquid-solid growth mode for self-avoiding lateral silicon nanowires.

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1
Laboratoire de Physique des Interfaces et des Couches Minces, Ecole Polytechnique, CNRS, 91128 Palaiseau, France.

Abstract

We report an in-plane solid-liquid-solid (IPSLS) mode for obtaining self-avoiding lateral silicon nanowires (SiNW) in a reacting-gas-free annealing process, where the growth of SiNWs is guided by liquid indium drops that transform the surrounding a-SiratioH matrix into crystalline SiNWs. The SiNWs can be approximately mm long, with the smallest diameter down to approximately 22 nm. A high growth rate of >10(2) nm/s and rich evolution dynamics are revealed in a real-time in situ scanning electron microscopy observation. A qualitative growth model is proposed to account for the major features of this IPSLS SiNW growth mode.

PMID:
19392293
DOI:
10.1103/PhysRevLett.102.125501
[Indexed for MEDLINE]
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