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Nano Lett. 2009 Jan;9(1):422-6. doi: 10.1021/nl803316h.

Operation of graphene transistors at gigahertz frequencies.

Author information

1
IBM T.J. Watson Research Center, Yorktown Heights, New York 10598. yming@us.ibm.com

Abstract

Top-gated graphene transistors operating at high frequencies (gigahertz) have been fabricated and their characteristics analyzed. The measured intrinsic current gain shows an ideal 1/f frequency dependence, indicating a FET-like behavior for graphene transistors. The cutoff frequency f(T) is found to be proportional to the dc transconductance g(m) of the device, consistent with the relation f(T) = g(m)/(2piC(G)). The peak f(T) increases with a reduced gate length, and f(T) as high as 26 GHz is measured for a graphene transistor with a gate length of 150 nm. The work represents a significant step toward the realization of graphene-based electronics for high-frequency applications.

PMID:
19099364
DOI:
10.1021/nl803316h
[Indexed for MEDLINE]

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