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Phys Rev Lett. 2008 Sep 12;101(11):117208. Epub 2008 Sep 12.

Mott relation for anomalous Hall and Nernst effects in Ga1-xMnxAs ferromagnetic semiconductors.

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1
Department of Physics and Astronomy, University of California, Riverside, California 92521, USA.

Abstract

The Mott relation between the electrical and thermoelectric transport coefficients normally holds for phenomena involving scattering. However, the anomalous Hall effect (AHE) in ferromagnets may arise from intrinsic spin-orbit interaction. In this work, we have simultaneously measured AHE and the anomalous Nernst effect (ANE) in Ga1-xMnxAs ferromagnetic semiconductor films, and observed an exceptionally large ANE at zero magnetic field. We further show that AHE and ANE share a common origin and demonstrate the validity of the Mott relation for the anomalous transport phenomena.

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