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Nano Lett. 2008 Nov;8(11):3973-7. doi: 10.1021/nl802497e. Epub 2008 Sep 30.

Piezoelectric-potential-controlled polarity-reversible Schottky diodes and switches of ZnO wires.

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School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA.


Using a two-end bonded ZnO piezoelectric-fine-wire (PFW) (nanowire, microwire) on a flexible polymer substrate, the strain-induced change in I-V transport characteristic from symmetric to diode-type has been observed. This phenomenon is attributed to the asymmetric change in Schottky-barrier heights at both source and drain electrodes as caused by the strain-induced piezoelectric potential-drop along the PFW, which have been quantified using the thermionic emission-diffusion theory. A new piezotronic switch device with an "on" and "off" ratio of approximately 120 has been demonstrated. This work demonstrates a novel approach for fabricating diodes and switches that rely on a strain governed piezoelectric-semiconductor coupling process.

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