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Nat Nanotechnol. 2008 Jul;3(7):402-7. doi: 10.1038/nnano.2008.161. Epub 2008 Jun 15.

Individually addressable epitaxial ferroelectric nanocapacitor arrays with near Tb inch-2 density.

Abstract

Ferroelectric materials have emerged in recent years as an alternative to magnetic and dielectric materials for nonvolatile data-storage applications. Lithography is widely used to reduce the size of data-storage elements in ultrahigh-density memory devices. However, ferroelectric materials tend to be oxides with complex structures that are easily damaged by existing lithographic techniques, so an alternative approach is needed to fabricate ultrahigh-density ferroelectric memories. Here we report a high-temperature deposition process that can fabricate arrays of individually addressable metal/ferroelectric/metal nanocapacitors with a density of 176 Gb inch(-2). The use of an ultrathin anodic alumina membrane as a lift-off mask makes it possible to deposit the memory elements at temperatures as high as 650 degrees C, which results in excellent ferroelectric properties.

PMID:
18654563
DOI:
10.1038/nnano.2008.161
[Indexed for MEDLINE]

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