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Opt Express. 2008 Jun 23;16(13):9501-6.

Widefield subsurface microscopy of integrated circuits.

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  • 1Department of Physics and Electrical and Computer Engineering and the Photonics Center, Boston University, 8 Saint Mary's Street, Boston, Massachusetts 02215, USA.


We apply the numerical aperture increasing lens technique to widefield subsurface imaging of silicon integrated circuits. We demonstrate lateral and longitudinal resolutions well beyond the limits of conventional backside imaging. With a simple infrared widefield microscope (lambda(0) = 1.2 microm), we demonstrate a lateral spatial resolution of 0.26 microm (0.22 lambda(0)) and a longitudinal resolution of 1.24 microm (1.03 lambda(0)) for backside imaging through the silicon substrate of an integrated circuit. We present a spatial resolution comparison between widefield and confocal microscopy, which are essential in integrated circuit analysis for emission and excitation microscopy, respectively.

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