Send to

Choose Destination
See comment in PubMed Commons below
Opt Express. 2008 Mar 3;16(5):3439-44.

Electro-optic and electro-absorption characterization of InAs quantum dot waveguides.

Author information

Materials Science and Nanotechnology Program, Physics Department, Bilkent University, 06800, Ankara, Turkey.


Optical properties of multilayer InAs quantum dot waveguides, grown by molecular beam epitaxy, have been studied under applied electric field. Fabry-Perot measurements at 1515 nm on InAs/GaAs quantum dot structures yield a significantly enhanced linear electro-optic efficiency compared to bulk GaAs. Electro-absorption measurements at 1300 nm showed increased absorption with applied field accompanied with red shift of the spectra. Spectral shifts of up to 21% under 18 Volt bias was observed at 1320 nm.

[Indexed for MEDLINE]
PubMed Commons home

PubMed Commons

How to join PubMed Commons

    Supplemental Content

    Full text links

    Icon for Optical Society of America
    Loading ...
    Support Center