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Opt Express. 2008 Mar 3;16(5):3439-44.

Electro-optic and electro-absorption characterization of InAs quantum dot waveguides.

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1
Materials Science and Nanotechnology Program, Physics Department, Bilkent University, 06800, Ankara, Turkey. imran@bilkent.edu.tr

Abstract

Optical properties of multilayer InAs quantum dot waveguides, grown by molecular beam epitaxy, have been studied under applied electric field. Fabry-Perot measurements at 1515 nm on InAs/GaAs quantum dot structures yield a significantly enhanced linear electro-optic efficiency compared to bulk GaAs. Electro-absorption measurements at 1300 nm showed increased absorption with applied field accompanied with red shift of the spectra. Spectral shifts of up to 21% under 18 Volt bias was observed at 1320 nm.

PMID:
18542435
[Indexed for MEDLINE]
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