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Small. 2008 Jun;4(6):751-4. doi: 10.1002/smll.200700936.

Interface and wetting layer effect on the catalyst-free nucleation and growth of GaN nanowires.

Author information

1
Institute of Bio- and Nanosystems and Center of Nanoelectronic Systems for Information Technology Research Centre, Jülich GmbH, 52425 Jülich, Germany.
PMID:
18535990
DOI:
10.1002/smll.200700936
[Indexed for MEDLINE]

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