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Small. 2008 May;4(5):642-8. doi: 10.1002/smll.200700517.

Fabrication of suspended silicon nanowire arrays.

Author information

  • 1Korea Electronics Technology Institute(KETI) #68, Yatap-dong, Bundan-gu, Seongnam-si Gyeonggi-do, 463-816, Korea. plummy@keti.re.kr

Abstract

A method to fabricate suspended silicon nanowires that are applicable to electronic and electromechanical nanowire devices is reported. The method allows for the wafer-level production of suspended silicon nanowires using anisotropic etching and thermal oxidation of single-crystal silicon. The deviation in width of the silicon nanowire bridges produced using the proposed method is evaluated. The NW field-effect transistor (FET) properties of the device obtained by transferring suspended nanowires are shown to be practical for useful functions.

PMID:
18431721
DOI:
10.1002/smll.200700517
[PubMed - indexed for MEDLINE]
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