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Phys Rev Lett. 2008 Feb 1;100(4):047401. Epub 2008 Jan 28.

Polariton laser using single micropillar GaAs-GaAlAs semiconductor cavities.

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1
CNRS-Laboratoire de Photonique et Nanostructures, Route de Nozay, 91460 Marcoussis, France.

Abstract

Polariton lasing is demonstrated on the zero-dimensional states of single GaAs/GaAlAs micropillar cavities. Under nonresonant excitation, the measured polariton ground-state occupancy is found as large as 10(4). Changing the spatial excitation conditions, competition between several polariton lasing modes is observed, ruling out Bose-Einstein condensation. When the polariton state occupancy increases, the emission blueshift is the signature of self-interaction within the half-light half-matter polariton lasing mode.

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