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Nano Lett. 2008 Mar;8(3):950-6. doi: 10.1021/nl0731116. Epub 2008 Feb 27.

Tunable electronic transport characteristics of surface-architecture-controlled ZnO nanowire field effect transistors.

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1
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Korea.

Abstract

Surface-architecture-controlled ZnO nanowires were grown using a vapor transport method on various ZnO buffer film coated c-plane sapphire substrates with or without Au catalysts. The ZnO nanowires that were grown showed two different types of geometric properties: corrugated ZnO nanowires having a relatively smaller diameter and a strong deep-level emission photoluminescence (PL) peak and smooth ZnO nanowires having a relatively larger diameter and a weak deep-level emission PL peak. The surface morphology and size-dependent tunable electronic transport properties of the ZnO nanowires were characterized using a nanowire field effect transistor (FET) device structure. The FETs made from smooth ZnO nanowires with a larger diameter exhibited negative threshold voltages, indicating n-channel depletion-mode behavior, whereas those made from corrugated ZnO nanowires with a smaller diameter had positive threshold voltages, indicating n-channel enhancement-mode behavior.

PMID:
18302326
DOI:
10.1021/nl0731116

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