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Nano Lett. 2008 Mar;8(3):876-80. doi: 10.1021/nl073112y. Epub 2008 Feb 12.

An organic/Si nanowire hybrid field configurable transistor.

Author information

1
Department of Mechanical and Aerospace Engineering and California NanoSystems Institute, University of California, Los Angeles 90095, USA.

Abstract

We report a field configurable transistor (FCT) fabricated on a Si nanowire FET platform by integrating a thin film of conjugated polymer poly[2-methoxy-5-(2'-ethylhexyloxy)-p-phenylene vinylene] (MEH-PPV) and an ionic conductive layer (RbAg4I5) into the gate. The FCT can be precisely configured to desired nonvolatile analog state dynamically, repeatedly, and reversibly by controlling the concentration of iodide ions in the MEH-PPV layer with a gate voltage. The flexible configurability and plasticity of the FCT could facilitate field-programmable circuits for defect-tolerance and synapse-like devices for learning.

PMID:
18266332
DOI:
10.1021/nl073112y

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