Format

Send to

Choose Destination
Opt Lett. 2008 Feb 1;33(3):225-7.

Passively mode-locked Nd:LuVO(4) laser with a GaAs wafer.

Author information

1
State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, China.

Abstract

We report on the passive mode locking of a diode-pumped Nd:LuVO(4) laser with a GaAs wafer as output coupler. Using the interference modulation effect of the GaAs wafer, high-power continuous-wave mode locking with a pulse width of about 7.1 ps and an average output power of 3.11 W was achieved. Our result shows that Nd:LuVO(4) could be an excellent gain medium for diode-pumped high-power mode-locked lasers.

PMID:
18246136

Supplemental Content

Full text links

Icon for Optical Society of America
Loading ...
Support Center