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Opt Lett. 1999 Oct 15;24(20):1407-9.

Two-photon optical-beam-induced current imaging of indium gallium nitride blue light-emitting diodes.

Abstract

Epilayers of packaged indium gallium nitride light-emitting diodes (LED's) are characterized by optical-beam-induced current (OBIC) and photoluminescence laser-scanning microscopy through two-photon excitation. Light scattering and absorption in the packaging material and the p-doped top layer of the LED's are greatly reduced as a result of employing a longer excitation wavelength, with energy that is less than the bandgap of the top p layer. Compared with single-photon OBIC, two-photon OBIC imaging not only exhibits superior image quality but also reveals more clearly the characteristics of the epilayers that are being focused on.

PMID:
18079817
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