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Nat Mater. 2007 Nov;6(11):833-40.

Nanoionics-based resistive switching memories.

Author information

1
Institut für Werkstoffe der Elektrotechnik 2, RWTH Aachen University, 52056 Aachen, Germany. r.waser@fz-juelich.de

Abstract

Many metal-insulator-metal systems show electrically induced resistive switching effects and have therefore been proposed as the basis for future non-volatile memories. They combine the advantages of Flash and DRAM (dynamic random access memories) while avoiding their drawbacks, and they might be highly scalable. Here we propose a coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms. The ion-migration effects are coupled to redox processes which cause the change in resistance. They are subdivided into cation-migration cells, based on the electrochemical growth and dissolution of metallic filaments, and anion-migration cells, typically realized with transition metal oxides as the insulator, in which electronically conducting paths of sub-oxides are formed and removed by local redox processes. From this insight, we take a brief look into molecular switching systems. Finally, we discuss chip architecture and scaling issues.

PMID:
17972938
DOI:
10.1038/nmat2023

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