Send to

Choose Destination
See comment in PubMed Commons below
J Phys Chem B. 2007 Jul 12;111(27):7756-60. Epub 2007 Jun 15.

Study on threshold behavior of operation voltage in metal filament-based polymer memory.

Author information

Display Device and Material Laboratory, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Korea.


In the metal filament formation-based organic memory, the positive voltage application over the threshold electric field strength (170 MV/m) is necessary for the filament formation in Cu/P3HT/Al device. By the positive voltage application, the copper ions are generated and drifted into polymer layer, which is clearly confirmed by the secondary ion mass spectroscopy. Also, the field strength (100 MV/m) required for the drift process could be independently determined with a new pulse operation method. We could conclude that the threshold field strength of 170 MV/m was determined by the ionization process of copper. Furthermore, the dependence of the positive field strength and the temperature on the memory behavior was studied.

PubMed Commons home

PubMed Commons

How to join PubMed Commons

    Supplemental Content

    Full text links

    Icon for American Chemical Society
    Loading ...
    Support Center