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J Phys Chem B. 2007 Jul 12;111(27):7756-60. Epub 2007 Jun 15.

Study on threshold behavior of operation voltage in metal filament-based polymer memory.

Author information

1
Display Device and Material Laboratory, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Korea. wj.joo@samsung.com

Abstract

In the metal filament formation-based organic memory, the positive voltage application over the threshold electric field strength (170 MV/m) is necessary for the filament formation in Cu/P3HT/Al device. By the positive voltage application, the copper ions are generated and drifted into polymer layer, which is clearly confirmed by the secondary ion mass spectroscopy. Also, the field strength (100 MV/m) required for the drift process could be independently determined with a new pulse operation method. We could conclude that the threshold field strength of 170 MV/m was determined by the ionization process of copper. Furthermore, the dependence of the positive field strength and the temperature on the memory behavior was studied.

PMID:
17569553
DOI:
10.1021/jp0684933
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