Format

Send to

Choose Destination
See comment in PubMed Commons below
Science. 2006 Dec 15;314(5806):1757-61.

Quantum spin Hall effect and topological phase transition in HgTe quantum wells.

Author information

  • 1Department of Physics, Stanford University, Stanford, CA 94305, USA.

Abstract

We show that the quantum spin Hall (QSH) effect, a state of matter with topological properties distinct from those of conventional insulators, can be realized in mercury telluride-cadmium telluride semiconductor quantum wells. When the thickness of the quantum well is varied, the electronic state changes from a normal to an "inverted" type at a critical thickness d(c). We show that this transition is a topological quantum phase transition between a conventional insulating phase and a phase exhibiting the QSH effect with a single pair of helical edge states. We also discuss methods for experimental detection of the QSH effect.

PMID:
17170299
DOI:
10.1126/science.1133734
[PubMed]
Free full text
PubMed Commons home

PubMed Commons

0 comments
How to join PubMed Commons

    Supplemental Content

    Full text links

    Icon for HighWire
    Loading ...
    Support Center