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Nano Lett. 2006 Dec;6(12):2991-4.

NiO as an inorganic hole-transporting layer in quantum-dot light-emitting devices.

Author information

1
Department of Chemistry, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA.

Abstract

We demonstrate a hybrid inorganic/organic light-emitting device composed of a CdSe/ZnS core/shell semiconductor quantum-dot emissive layer sandwiched between p-type NiO and tris-(8-hydroxyquinoline) aluminum (Alq3), as hole and electron transporting layers, respectively. A maximum external electroluminescence quantum efficiency of 0.18% is achieved by tuning the resistivity of the NiO layer to balance the electron and hole densities at quantum-dot sites.

PMID:
17163746
DOI:
10.1021/nl0623208

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