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Phys Rev Lett. 2006 Oct 20;97(16):166402. Epub 2006 Oct 18.

Phosphorus donors in highly strained silicon.

Author information

1
Walter Schottky Institut, Technische Universit√§t M√ľnchen, Am Coulombwall 3, Garching, Germany. huebl@wsi.tum.de

Abstract

The hyperfine interaction of phosphorus donors in fully strained Si thin films grown on virtual Si(1-x)Ge(x) substrates with x< or =0.3 is determined via electrically detected magnetic resonance. For highly strained epilayers, hyperfine interactions as low as 0.8 mT are observed, significantly below the limit predicted by valley repopulation. Within a Green's function approach, density functional theory shows that the additional reduction is caused by the volume increase of the unit cell and a relaxation of the Si ligands of the donor.

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