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Nano Lett. 2006 Sep;6(9):2158-62.

Tuning from thermionic emission to ohmic tunnel contacts via doping in Schottky-barrier nanotube transistors.

Author information

1
Department of Physics and Center for Superconductivity Research, University of Maryland, College Park, Maryland 20742-4111, USA.

Abstract

Electrical power >1 mW is dissipated in semiconducting single-walled carbon nanotube devices in a vacuum. After high-power treatment, devices exhibit lower on currents and intrinsic, ambipolar behavior with near-ideal thermionic emission from Schottky barriers of height one-half the band gap. Upon exposure to air, devices recover p-type behavior, with positive threshold and ohmic contacts. The air-exposed state cannot be explained by a change in contact work function but instead is due to doping of the nanotube.

PMID:
16968044
DOI:
10.1021/nl061379b
[Indexed for MEDLINE]

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